Memory Parameter Settings. Delays. Part II

Before or during any operation of data reading-writing, there are various delays that are necessary for the stabilization of operation. In some cases, decreasing of delays allows speeding up the operation of memory, but remember, if you computer becomes unstable or “hangs’, it is better to return to default values.

  • The parameter “DRAM R/W Leadoff Timing” defines the number of cycles spent by memory while preparing an operation of data reading-writing. This parameter may have values 7/8 or 7/5: the first number indicates the amount of cycles spent while reading and the second – while writing.
  • The parameter “Speculative Leadoff” allows using the mode of anticipating signaling of data reading. This parameter has got two values: Disable or Enable. If you turn this parameter on, you may save several cycles spent by default on identification of the address of the required cell.
  • The parameter “Fast RAS-to-CAS Delay” (RAS# to CAS# Address Delay, RAS to CAS Delay Time, DRAM RAS to CAS Delay, FPM/EDO RAS-to-CAS Delay, SDRAM RAS# to CAS# Delay) defines the time of delay between control signals (strobes) of the calls to the columns and rows. This delay is intended for identification of the row address of memory cell which is determined by RAS (Row Address Strobe), and the columns address which is determined by CAS (Column Address Strobe). Different versions of BIOS offer various values to set this delay: Fast and Slow, Enabled or Disabled, 2Clks or 3Clks (clocks). In some cases there may be a set of values: 0T (instead of Clks), 1T, 2T, 3T.