The parameter “DRAM RAS Precharge Time” identifies the time (in clocks) which is required to amass the charge before the beginning of regeneration cycle of the neighboring memory rows. This parameter may have such values as 3T or 4T, Fast or Slow, or specific values in milliseconds: 7.8 ms, 15.6 ms, 32.2 ms and 64.4 ms. In contrast to the other parameters, this delay needs to be increased, but a large increase in time of this delay may cause destabilization in memory operation.
The parameter “MA Wait State” enables to set or delete an additional waiting clock before reading memory. This parameter may have values Fast or Slow. For EDO-memory, the value “Slow” adds one more waiting clock to the existing clock.
The parameter “Read Around Write” enables to use the buffer of data storage. This buffer stores the data while “Read Data” operation is performed and writes these data in memory after the bus is exempted. This parameter may have values “Enabled” and “Disabled”. Using such buffer allows significantly optimizing the operation of memory.
The parameter “DRAM Idler Timer” enables to set a timer of passive memory status, defining the time during which all opened memory pages will be closed when a processor enters the standby mode. This parameter may have the following values: 0T, 2T, 4T, 8T, 10T, 12T, 16T and 32T. The values 2T or 4T will be quite sufficient for stable operation of your memory.