Parameters of Memory Overclocking. Part V

Additional Parameters of Memory

Some motherboards have additional parameters of memory. They influence the productivity less than the main timings so, in most cases, they should be left by default. If you have time and a desire to experiment, with the help them you can increase the speed of memory operation a bit more. In most cases you will find the following parameters:

  • tRRD (RAS to RAS delay) – a delay between activation of lines of different banks;
  • tRC (Row Cycle Time) – the cycle duration of memory line;
  • tWR (Write Recovery Time) – a delay between the conclusion of the record operation and the beginning of precharging;
  • tWTR (Write to Read Delay) – a delay between the conclusion of the record operation and the beginning of reading operation;
  • tRTP (Precharge Time) – an interval between the commands of reading and precharging;
  • tRFC (ROW Refresh Cycle Time) – a minimal time between the command of line updating and the command of activation or another updating command;
  • Bank Interleave – detection of rotation mode when calling memory banks;
  • DRAM Burst Length – detection of data package while reading from memory;
  • DDR Clock Skew (Clock Skew for Channel А/В) – shift adjustment of clock signals for memory modules.


Timing memory changing may lead to unstable operation of your computer, so you should set timing by default if any failure occurs.

Extreme Memory Profile (X.M.P.)

This parameter allows turning on the support for advanced memory profiles. This technology was designed by Intel and implies that additional sets of parameters record in the SPD chip for operation on higher frequency or with minimal delays. To use this technology, it must be supported by your motherboard model.

Possible values:

  • Disabled – a memory operates in its normal mode;
  • Profile!, Profile2 – selection of one of memory profiles with higher productivity. Refer to detailed specification of your module to find out the parameters of these profiles.